Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi. Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability. Integration, 43(2):176-187, 2010. [doi]
@article{LinKL10-0,
title = {Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability},
author = {Sheng Lin and Yong-Bin Kim and Fabrizio Lombardi},
year = {2010},
doi = {10.1016/j.vlsi.2010.01.003},
url = {http://dx.doi.org/10.1016/j.vlsi.2010.01.003},
tags = {analysis, design},
researchr = {https://researchr.org/publication/LinKL10-0},
cites = {0},
citedby = {0},
journal = {Integration},
volume = {43},
number = {2},
pages = {176-187},
}