Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment

M. H. Lin, Y.-L. Lin, K. P. Chang, K. C. Su, Tahui Wang. Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment. Microelectronics Reliability, 45(7-8):1061-1078, 2005. [doi]

@article{LinLCSW05,
  title = {Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment},
  author = {M. H. Lin and Y.-L. Lin and K. P. Chang and K. C. Su and Tahui Wang},
  year = {2005},
  doi = {10.1016/j.microrel.2004.11.055},
  url = {http://dx.doi.org/10.1016/j.microrel.2004.11.055},
  tags = {C++},
  researchr = {https://researchr.org/publication/LinLCSW05},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {45},
  number = {7-8},
  pages = {1061-1078},
}