A fully integrated 0.18 μm SiGe BiCMOS power amplifier

GuoJun Liu. A fully integrated 0.18 μm SiGe BiCMOS power amplifier. In 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015. pages 1-4, IEEE, 2015. [doi]

Abstract

Abstract is missing.