Y. H. Liu, H. Y. Lin, C. M. Jiang, Tahui Wang, W. J. Tsai, T. C. Lu, K.-C. Chen, Chih-Yuan Lu. Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]
Abstract is missing.