Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi. Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN. Microelectronics Journal, 37(5):417-420, 2006. [doi]

@article{LiuSCCH06,
  title = {Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN},
  author = {K. T. Liu and Y. K. Su and R. W. Chuang and S. J. Chang and Y. Horikoshi},
  year = {2006},
  doi = {10.1016/j.mejo.2005.05.026},
  url = {http://dx.doi.org/10.1016/j.mejo.2005.05.026},
  tags = {composition},
  researchr = {https://researchr.org/publication/LiuSCCH06},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {37},
  number = {5},
  pages = {417-420},
}