Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi. Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN. Microelectronics Journal, 37(5):417-420, 2006. [doi]

Abstract

Abstract is missing.