Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction Transistors

Fengkai Liu, Lei Wu, Kai Wang, Enhao Guan, Xingji Li. Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction Transistors. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]

@inproceedings{LiuWWGL23,
  title = {Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction Transistors},
  author = {Fengkai Liu and Lei Wu and Kai Wang and Enhao Guan and Xingji Li},
  year = {2023},
  doi = {10.1109/IRPS48203.2023.10118017},
  url = {https://doi.org/10.1109/IRPS48203.2023.10118017},
  researchr = {https://researchr.org/publication/LiuWWGL23},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-5672-2},
}