Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction Transistors

Fengkai Liu, Lei Wu, Kai Wang, Enhao Guan, Xingji Li. Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction Transistors. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]

Abstract

Abstract is missing.