P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation

Cheng-Hung Lo, Shi-Yu Huang. P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation. J. Solid-State Circuits, 46(3):695-704, 2011. [doi]

Abstract

Abstract is missing.