Characterization, simulation, and modeling of FET source/drain diffusion resistance

Ning Lu, Bill Dewey. Characterization, simulation, and modeling of FET source/drain diffusion resistance. In Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, CICC 2008, DoubleTree Hotel, San Jose, California, USA, September 21-24, 2008. pages 281-284, IEEE, 2008. [doi]

@inproceedings{LuD08-2,
  title = {Characterization, simulation, and modeling of FET source/drain diffusion resistance},
  author = {Ning Lu and Bill Dewey},
  year = {2008},
  doi = {10.1109/CICC.2008.4672076},
  url = {http://dx.doi.org/10.1109/CICC.2008.4672076},
  researchr = {https://researchr.org/publication/LuD08-2},
  cites = {0},
  citedby = {0},
  pages = {281-284},
  booktitle = {Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, CICC 2008, DoubleTree Hotel, San Jose, California, USA, September 21-24, 2008},
  publisher = {IEEE},
  isbn = {978-1-4244-2018-6},
}