Hybrid MOSFET-TFET 11T SRAM cell with high write speed and free half-selected disturbance

Wenjuan Lu, Chuang Wang, Wei Hu, Chenghu Dai, Chunyu Peng, Zhiting Lin, Xiulong Wu. Hybrid MOSFET-TFET 11T SRAM cell with high write speed and free half-selected disturbance. Microelectronics Journal, 156:106498, 2025. [doi]

Abstract

Abstract is missing.