Guangyi Lu, Yuan Wang, Lizhong Zhang, Yize Wang, Ru Huang, Xing Zhang 0002. Investigation on the Gate Bias Voltage of BigFET in Power-rail ESD Clamp Circuit for Enhanced Transient Noise Immunity. In IEEE International Symposium on Circuits and Systems, ISCAS 2018, 27-30 May 2018, Florence, Italy. pages 1-5, IEEE, 2018. [doi]
@inproceedings{LuWZWH018,
title = {Investigation on the Gate Bias Voltage of BigFET in Power-rail ESD Clamp Circuit for Enhanced Transient Noise Immunity},
author = {Guangyi Lu and Yuan Wang and Lizhong Zhang and Yize Wang and Ru Huang and Xing Zhang 0002},
year = {2018},
doi = {10.1109/ISCAS.2018.8350905},
url = {https://doi.org/10.1109/ISCAS.2018.8350905},
researchr = {https://researchr.org/publication/LuWZWH018},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2018, 27-30 May 2018, Florence, Italy},
publisher = {IEEE},
isbn = {978-1-5386-4881-0},
}