Tripping Characteristics of Residual Current Devices under Non-Sinusoidal Currents

Xiang Luo, Ya-ping Du, Xinghua Wang 0002, Mingli Chen 0002. Tripping Characteristics of Residual Current Devices under Non-Sinusoidal Currents. In Annual Meeting of the IEEE Industry Applications Society, IAS 2010, Houston, TX, USA, 3-7 October, 2010, Proceedings. pages 1-6, IEEE, 2010. [doi]

@inproceedings{LuoDWC10,
  title = {Tripping Characteristics of Residual Current Devices under Non-Sinusoidal Currents},
  author = {Xiang Luo and Ya-ping Du and Xinghua Wang 0002 and Mingli Chen 0002},
  year = {2010},
  doi = {10.1109/IAS.2010.5616786},
  url = {http://dx.doi.org/10.1109/IAS.2010.5616786},
  researchr = {https://researchr.org/publication/LuoDWC10},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {Annual Meeting of the IEEE Industry Applications Society, IAS 2010, Houston, TX, USA, 3-7 October, 2010, Proceedings},
  publisher = {IEEE},
  isbn = {978-1-4244-6393-0},
}