A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation

Haowen Luo, Ruihan Li, Xiangshui Miao, Xingsheng Wang. A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation. Science in China Series F: Information Sciences, 66(2), February 2023. [doi]

@article{LuoLMW23,
  title = {A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation},
  author = {Haowen Luo and Ruihan Li and Xiangshui Miao and Xingsheng Wang},
  year = {2023},
  month = {February},
  doi = {10.1007/s11432-021-3399-3},
  url = {https://doi.org/10.1007/s11432-021-3399-3},
  researchr = {https://researchr.org/publication/LuoLMW23},
  cites = {0},
  citedby = {0},
  journal = {Science in China Series F: Information Sciences},
  volume = {66},
  number = {2},
}