L. Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, F. Zhang, D. Shum, Kin Leong Pey. Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]
Abstract is missing.