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Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors

Ling Lv, J. G. Ma, Y. R. Cao, J. C. Zhang, W. Zhang, L. Li, S. R. Xu, X. H. Ma, X. T. Ren, Y. Hao. Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 51(12):2168-2172, 2011. [doi]

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Ling Lv

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J. G. Ma

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Y. R. Cao

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J. C. Zhang

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W. Zhang

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L. Li

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S. R. Xu

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X. H. Ma

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X. T. Ren

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Y. Hao

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