Ling Lv, J. G. Ma, Y. R. Cao, J. C. Zhang, W. Zhang, L. Li, S. R. Xu, X. H. Ma, X. T. Ren, Y. Hao. Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 51(12):2168-2172, 2011. [doi]
@article{LvMCZZLXMRH11,
title = {Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors},
author = {Ling Lv and J. G. Ma and Y. R. Cao and J. C. Zhang and W. Zhang and L. Li and S. R. Xu and X. H. Ma and X. T. Ren and Y. Hao},
year = {2011},
doi = {10.1016/j.microrel.2011.04.022},
url = {http://dx.doi.org/10.1016/j.microrel.2011.04.022},
researchr = {https://researchr.org/publication/LvMCZZLXMRH11},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {51},
number = {12},
pages = {2168-2172},
}