A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan. A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. In 10th International Symposium on Quality of Electronic Design (ISQED 2009), 16-18 March 2009, San Jose, CA, USA. pages 7-12, IEEE, 2009. [doi]

This author has not been identified. Look up 'Chenyue Ma' in GoogleThis author has not been identified. Look up 'Bo Li' in GoogleThis author has not been identified. Look up 'Lining Zhang' in GoogleThis author has not been identified. Look up 'Jin He' in GoogleThis author has not been identified. Look up 'Xing Zhang' in GoogleThis author has not been identified. Look up 'Xinnan Lin' in GoogleThis author has not been identified. Look up 'Mansun Chan' in Google

runs on WebDSL