Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan. A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. In 10th International Symposium on Quality of Electronic Design (ISQED 2009), 16-18 March 2009, San Jose, CA, USA. pages 7-12, IEEE, 2009. [doi]
@inproceedings{MaLZHZLC09,
title = {A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability},
author = {Chenyue Ma and Bo Li and Lining Zhang and Jin He and Xing Zhang and Xinnan Lin and Mansun Chan},
year = {2009},
doi = {10.1109/ISQED.2009.4810262},
url = {http://dx.doi.org/10.1109/ISQED.2009.4810262},
tags = {reliability},
researchr = {https://researchr.org/publication/MaLZHZLC09},
cites = {0},
citedby = {0},
pages = {7-12},
booktitle = {10th International Symposium on Quality of Electronic Design (ISQED 2009), 16-18 March 2009, San Jose, CA, USA},
publisher = {IEEE},
}