21.9 A -82.3dB THD+N 60V Fully Integrated Shunt-Resistor-Based In-Line Current Sensor with DLL-Assisted Dynamic Body-Biasing Technique

Heng Ma, Huajun Zhang 0001, Qinwen Fan. 21.9 A -82.3dB THD+N 60V Fully Integrated Shunt-Resistor-Based In-Line Current Sensor with DLL-Assisted Dynamic Body-Biasing Technique. In IEEE International Solid-State Circuits Conference, ISSCC 2026, San Francisco, CA, USA, February 15-19, 2026. pages 380-382, IEEE, 2026. [doi]

Abstract

Abstract is missing.