M. Iqbal Mahmud, A. Gupta, Maria Toledano-Luque, N. Mavilla, J. Johnson, P. Srinivasan, A. Zainuddin, S. Rao, S. Cimino, B. Min, Tanya Nigam. Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-6, IEEE, 2019. [doi]
@inproceedings{MahmudGTMJSZRCM19,
title = {Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs},
author = {M. Iqbal Mahmud and A. Gupta and Maria Toledano-Luque and N. Mavilla and J. Johnson and P. Srinivasan and A. Zainuddin and S. Rao and S. Cimino and B. Min and Tanya Nigam},
year = {2019},
doi = {10.1109/IRPS.2019.8720535},
url = {https://doi.org/10.1109/IRPS.2019.8720535},
researchr = {https://researchr.org/publication/MahmudGTMJSZRCM19},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
publisher = {IEEE},
isbn = {978-1-5386-9504-3},
}