Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

D. Maldonado, Juan Bautista Roldán, Andrés M. Roldán, Francisco Jiménez-Molinos, F. Hui, Y. Shi, Xu Jing, C. Wen, M. Lanza. Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

Abstract

Abstract is missing.