B. Gunnar Malm, Hossein Elahipanah, Arash Salemi, Mikael Östling. Gated base structure for improved current gain in SiC bipolar technology. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 122-125, IEEE, 2017. [doi]
@inproceedings{MalmESO17, title = {Gated base structure for improved current gain in SiC bipolar technology}, author = {B. Gunnar Malm and Hossein Elahipanah and Arash Salemi and Mikael Östling}, year = {2017}, doi = {10.1109/ESSDERC.2017.8066607}, url = {https://doi.org/10.1109/ESSDERC.2017.8066607}, researchr = {https://researchr.org/publication/MalmESO17}, cites = {0}, citedby = {0}, pages = {122-125}, booktitle = {47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017}, publisher = {IEEE}, isbn = {978-1-5090-5978-2}, }