B. Gunnar Malm, Hossein Elahipanah, Arash Salemi, Mikael Östling. Gated base structure for improved current gain in SiC bipolar technology. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 122-125, IEEE, 2017. [doi]
Abstract is missing.