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Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs

I. Manic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic. Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. Microelectronics Reliability, 49(9-11):1003-1007, 2009. [doi]

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I. Manic

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D. Dankovic

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S. Djoric-Veljkovic

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V. Davidovic

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S. Golubovic

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Ninoslav Stojadinovic

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