Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs

I. Manic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic. Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. Microelectronics Reliability, 49(9-11):1003-1007, 2009. [doi]

Abstract

Abstract is missing.