An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM - researchr publication authors

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Randy W. Mann, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter. An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. IEEE Trans. VLSI Syst., 27(8):1819-1827, 2019. [doi]

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