Randy W. Mann, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter. An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. IEEE Trans. VLSI Syst., 27(8):1819-1827, 2019. [doi]
@article{MannZPGARPVHC19,
title = {An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM},
author = {Randy W. Mann and Meixiong Zhao and Sanjay Parihar and Qun Gao and Ankur Arya and Carl Radens and Shesh Mani Pandey and Joseph Versaggi and Jack M. Higman and Rick Carter},
year = {2019},
doi = {10.1109/TVLSI.2019.2907594},
url = {https://doi.org/10.1109/TVLSI.2019.2907594},
researchr = {https://researchr.org/publication/MannZPGARPVHC19},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {27},
number = {8},
pages = {1819-1827},
}