Breakdown investigation in GaN-based MIS-HEMT devices - researchr publication authors

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Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso. Breakdown investigation in GaN-based MIS-HEMT devices. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 377-380, IEEE, 2014. [doi]

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