P. Marko, Matteo Meneghini, Sergey Bychikhin, D. Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany. IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 52(9-10):2194-2199, 2012. [doi]
@article{MarkoMBMMZP12,
title = {IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors},
author = {P. Marko and Matteo Meneghini and Sergey Bychikhin and D. Marcon and Gaudenzio Meneghesso and Enrico Zanoni and Dionyz Pogany},
year = {2012},
doi = {10.1016/j.microrel.2012.06.030},
url = {http://dx.doi.org/10.1016/j.microrel.2012.06.030},
researchr = {https://researchr.org/publication/MarkoMBMMZP12},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {52},
number = {9-10},
pages = {2194-2199},
}