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IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

P. Marko, Matteo Meneghini, Sergey Bychikhin, D. Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany. IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 52(9-10):2194-2199, 2012. [doi]

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