Comparative analysis of differential colpitts and cross-coupled VCOs in 180 nm Si-Ge HBT technology

Valerio Marotta, Giuseppe Macera, Michael Peter Kennedy, Ettore Napoli. Comparative analysis of differential colpitts and cross-coupled VCOs in 180 nm Si-Ge HBT technology. In IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016. pages 1650-1653, IEEE, 2016. [doi]

@inproceedings{MarottaMKN16,
  title = {Comparative analysis of differential colpitts and cross-coupled VCOs in 180 nm Si-Ge HBT technology},
  author = {Valerio Marotta and Giuseppe Macera and Michael Peter Kennedy and Ettore Napoli},
  year = {2016},
  doi = {10.1109/ISCAS.2016.7538883},
  url = {http://dx.doi.org/10.1109/ISCAS.2016.7538883},
  researchr = {https://researchr.org/publication/MarottaMKN16},
  cites = {0},
  citedby = {0},
  pages = {1650-1653},
  booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016},
  publisher = {IEEE},
  isbn = {978-1-4799-5341-7},
}