Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown

Rafael Perez Martinez, Uppili S. Raghunathan, Brian R. Wier, Harrison P. Lee, John D. Cressler. Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

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