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D-Based Methodology Using 180 nm SOI From -40 °C to 200 °C

João Roberto Raposo De Oliveira Martins, Ali Mostafa, Jérôme Juillard, Rachid Hamani, Francisco De Oliveira Alves, Pietro Maris Ferreira. D-Based Methodology Using 180 nm SOI From -40 °C to 200 °C. IEEE Open J. Circuits Syst., 2:311-322, 2021. [doi]

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