DCG-FGT transistor: Retention study of Floating Gate charge - researchr publication authors

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A. Marzaki, V. Bidal, Romain Laffont, Wenceslas Rahajandraibe, Jean Michel Portal, Rachid Bouchakour. DCG-FGT transistor: Retention study of Floating Gate charge. In IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013. pages 825-827, IEEE, 2013. [doi]

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