A. Marzaki, V. Bidal, Romain Laffont, Wenceslas Rahajandraibe, Jean Michel Portal, Rachid Bouchakour. DCG-FGT transistor: Retention study of Floating Gate charge. In IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013. pages 825-827, IEEE, 2013. [doi]
@inproceedings{MarzakiBLRPB13,
title = {DCG-FGT transistor: Retention study of Floating Gate charge},
author = {A. Marzaki and V. Bidal and Romain Laffont and Wenceslas Rahajandraibe and Jean Michel Portal and Rachid Bouchakour},
year = {2013},
doi = {10.1109/MWSCAS.2013.6674776},
url = {https://doi.org/10.1109/MWSCAS.2013.6674776},
researchr = {https://researchr.org/publication/MarzakiBLRPB13},
cites = {0},
citedby = {0},
pages = {825-827},
booktitle = {IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013},
publisher = {IEEE},
}