An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system

Satoshi Masuda, Tsuyoshi Takahashi, Kazukiyo Joshin. An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system. J. Solid-State Circuits, 38(9):1479-1484, 2003. [doi]

Abstract

Abstract is missing.