2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application

Mari Matsumoto, Shinichi Yasuda, Ryuji Ohba, Kazutaka Ikegami, Tetsufumi Tanamoto, Shinobu Fujita. 2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application. In 2008 IEEE International Solid-State Circuits Conference, ISSCC 2008, Digest of Technical Papers, San Francisco, CA, USA, February 3-7, 2008. pages 414-415, IEEE, 2008. [doi]

@inproceedings{MatsumotoYOITF08,
  title = {2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application},
  author = {Mari Matsumoto and Shinichi Yasuda and Ryuji Ohba and Kazutaka Ikegami and Tetsufumi Tanamoto and Shinobu Fujita},
  year = {2008},
  doi = {10.1109/ISSCC.2008.4523233},
  url = {http://dx.doi.org/10.1109/ISSCC.2008.4523233},
  researchr = {https://researchr.org/publication/MatsumotoYOITF08},
  cites = {0},
  citedby = {0},
  pages = {414-415},
  booktitle = {2008 IEEE International Solid-State Circuits Conference, ISSCC 2008, Digest of Technical Papers, San Francisco, CA, USA, February 3-7, 2008},
  publisher = {IEEE},
  isbn = {978-1-4244-2010-0},
}