Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu 0001, Lingli Wang, Tingao Tang. Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs. Microelectronics Journal, 43(11):894-897, 2012. [doi]
@article{MeiLHLWT12,
title = {Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs},
author = {Guanghui Mei and Peicheng Li and Guangxi Hu and Ran Liu 0001 and Lingli Wang and Tingao Tang},
year = {2012},
doi = {10.1016/j.mejo.2012.05.013},
url = {http://dx.doi.org/10.1016/j.mejo.2012.05.013},
researchr = {https://researchr.org/publication/MeiLHLWT12},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {43},
number = {11},
pages = {894-897},
}