Trapping induced parasitic effects in GaN-HEMT for power switching applications

Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens. Trapping induced parasitic effects in GaN-HEMT for power switching applications. In 2015 International Conference on IC Design & Technology, ICICDT 2015, Leuven, Belgium, June 1-3, 2015. pages 1-4, IEEE, 2015. [doi]

Abstract

Abstract is missing.