Fanyi Meng, Kaixue Ma, Kiat Seng Yeo. 2 SPDT switch with 3.3dB loss and 23.7dB isolation in 65nm bulk CMOS. In 2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015. pages 1-3, IEEE, 2015. [doi]
@inproceedings{MengMY15, title = {2 SPDT switch with 3.3dB loss and 23.7dB isolation in 65nm bulk CMOS}, author = {Fanyi Meng and Kaixue Ma and Kiat Seng Yeo}, year = {2015}, doi = {10.1109/ISSCC.2015.7062852}, url = {http://dx.doi.org/10.1109/ISSCC.2015.7062852}, researchr = {https://researchr.org/publication/MengMY15}, cites = {0}, citedby = {0}, pages = {1-3}, booktitle = {2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015}, publisher = {IEEE}, isbn = {978-1-4799-6224-2}, }