Mesut Meterelliyoz, Fuad H. Al-amoody, Umut Arslan, Fatih Hamzaoglu, Luke Hood, Manoj B. Lal, Jeffrey L. Miller, Anand Ramasundar, Dan Soltman, Ifar Wan, Yih Wang, Kevin Zhang. nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology. In Symposium on VLSI Circuits, VLSIC 2014, Digest of Technical Papers, Honolulu, HI, USA, June 10-13, 2014. pages 1-2, IEEE, 2014. [doi]
Abstract is missing.