Shinji Migita, Takashi Matsukawa, T. Mori, K. Fukuda, Yukinori Morita, Wataru Mizubayashi, K. Endo, Y. X. Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota. Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 278-281, IEEE, 2014. [doi]
@inproceedings{MigitaMMFMMELOMO14,
title = {Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration},
author = {Shinji Migita and Takashi Matsukawa and T. Mori and K. Fukuda and Yukinori Morita and Wataru Mizubayashi and K. Endo and Y. X. Liu and Shin-ichi O'Uchi and Meishoku Masahara and Hiroyuki Ota},
year = {2014},
doi = {10.1109/ESSDERC.2014.6948814},
url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948814},
researchr = {https://researchr.org/publication/MigitaMMFMMELOMO14},
cites = {0},
citedby = {0},
pages = {278-281},
booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
publisher = {IEEE},
isbn = {978-1-4799-4378-4},
}