Xin-ming, Zhi-Wen Zhang, Ziwei Fan, Yao Qin, Yuan-yuan Liu, Bo Zhang 0027. High Reliability GaN FET Gate Drivers for Next-generation Power Electronics Technology. In 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{MingZFQLZ19,
title = {High Reliability GaN FET Gate Drivers for Next-generation Power Electronics Technology},
author = {Xin-ming and Zhi-Wen Zhang and Ziwei Fan and Yao Qin and Yuan-yuan Liu and Bo Zhang 0027},
year = {2019},
doi = {10.1109/ASICON47005.2019.8983566},
url = {https://doi.org/10.1109/ASICON47005.2019.8983566},
researchr = {https://researchr.org/publication/MingZFQLZ19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0735-6},
}