Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component

Yuichiro Mitani, Shigeto Fukatsu, D. Hagishima, K. Matsuzawa. Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component. In IEEE International Conference on IC Design & Technology, ICICDT 2012, Austin, TX, USA, May 30 - June 1, 2012. pages 1-4, IEEE, 2012. [doi]

Abstract

Abstract is missing.