Modeling FinFET metal gate stack resistance for 14nm node and beyond

Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean. Modeling FinFET metal gate stack resistance for 14nm node and beyond. In 2015 International Conference on IC Design & Technology, ICICDT 2015, Leuven, Belgium, June 1-3, 2015. pages 1-4, IEEE, 2015. [doi]

@inproceedings{MiyaguchiPRWRMM15,
  title = {Modeling FinFET metal gate stack resistance for 14nm node and beyond},
  author = {Kenichi Miyaguchi and Bertrand Parvais and Lars-Åke Ragnarsson and Piet Wambacq and Praveen Raghavan and Abdelkarim Mercha and Anda Mocuta and Diederik Verkest and Aaron Thean},
  year = {2015},
  doi = {10.1109/ICICDT.2015.7165885},
  url = {http://dx.doi.org/10.1109/ICICDT.2015.7165885},
  researchr = {https://researchr.org/publication/MiyaguchiPRWRMM15},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {2015 International Conference on IC Design & Technology, ICICDT 2015, Leuven, Belgium, June 1-3, 2015},
  publisher = {IEEE},
  isbn = {978-1-4799-7669-0},
}