Modulating surface trapping and electric-field distribution in 0.1 μm GaN HEMTs via localized cap-layer engineering

Jiongjiong Mo, Beibei Lv, Xuran Zhao. Modulating surface trapping and electric-field distribution in 0.1 μm GaN HEMTs via localized cap-layer engineering. Microelectronics Journal, 174:107215, 2026. [doi]

Abstract

Abstract is missing.