Modeling Hot-Electron Trapping in GaN-based HEMTs - researchr publication authors

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Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. Modeling Hot-Electron Trapping in GaN-based HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 10, IEEE, 2022. [doi]

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