Modeling Hot-Electron Trapping in GaN-based HEMTs

Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. Modeling Hot-Electron Trapping in GaN-based HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 10, IEEE, 2022. [doi]

@inproceedings{ModoloSMSSPMZM22,
  title = {Modeling Hot-Electron Trapping in GaN-based HEMTs},
  author = {Nicola Modolo and Carlo De Santi and Andrea Minetto and Luca Sayadi and Sebastien Sicre and Gerhard Prechtl and Gaudenzio Meneghesso and Enrico Zanoni and Matteo Meneghini},
  year = {2022},
  doi = {10.1109/IRPS48227.2022.9764414},
  url = {https://doi.org/10.1109/IRPS48227.2022.9764414},
  researchr = {https://researchr.org/publication/ModoloSMSSPMZM22},
  cites = {0},
  citedby = {0},
  pages = {10},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-7950-9},
}