Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij. The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-5, IEEE, 2023. [doi]
Abstract is missing.